The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Mar. 10, 1997
Applicant:
Inventors:
Yuzo Kataoka, Isehara, JP;
Tetsuo Asaba, Odawara, JP;
Kenji Makino, Yokohama, JP;
Hiroshi Yuzurihara, Isehara, JP;
Kei Fujita, Sagamihara, JP;
Seiji Kamei, Hiratsuka, JP;
Yutaka Akino, Isehara, JP;
Yutaka Yuge, Mishima, JP;
Mineo Shimotsusa, Atsugi, JP;
Hideshi Kuwabara, Zama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438304 ;
Abstract
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.