Canon Kabushiki Kaisha

Conon Kabushiki Kaisha

Yutaka Yuge

Hideshi Kuwabara

Mineo Shimotsusa

Kenji Makino

Hiroshi Yuzurihara

Kei Fujita

Tetsuo Asaba

Yutaka Akino

Seiji Kamei

Yuzo Kataoka

Akira Okita

Junichi Hoshi

Hidenori Watanabe

Yuzo Kayaoka

An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Manufacturing method of a semiconductor apparatus having an electron

A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.

Semiconductor device having an electrode which controls a surface state

A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

Method of manufacturing a ROM device having contact holes treated with

Method of forming metal pattern including a schottky diode

Method of forming a capacitor having contact hole treated with hydrogen

Growing community of inventors

Mishima, Japan

Yutaka Yuge