Location History:
- Georgetown, MA (US) (2010 - 2013)
- Gloucester, MA (US) (2015)
Company Filing History:
Years Active: 2010-2015
Title: Innovations of Inventor Yuri Erokhin
Introduction
Yuri Erokhin is a notable inventor based in Georgetown, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing device performance through innovative techniques.
Latest Patents
One of his latest patents is titled "Technique for forming a FinFET device using selective ion implantation." This patent describes a method for processing a three-dimensional structure on a substrate to alter the etch rate of the material on its surfaces. The process involves conformal deposition and ion implantation, which can either increase or decrease the etch rate of the material. Another significant patent is the "Method and system for forming low contact resistance device." This method treats a CMOS device by applying a stress liner and exposing it to ions that reduce contact resistance in the source/drain region of a transistor.
Career Highlights
Yuri Erokhin is currently employed at Varian Semiconductor Equipment Associates, Inc. His work at this company has been instrumental in advancing semiconductor manufacturing technologies. His innovative approaches have contributed to the development of more efficient and effective semiconductor devices.
Collaborations
Yuri has collaborated with several professionals in his field, including Peter Nunan and Steven Raymond Walther. These collaborations have fostered a productive environment for innovation and development in semiconductor technology.
Conclusion
Yuri Erokhin's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His innovative techniques continue to influence the industry and pave the way for future advancements.