The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Sep. 17, 2008
Yuri Erokhin, Georgetown, MA (US);
Paul Sullivan, Wenham, MA (US);
Steven R. Walther, Andover, MA (US);
Peter Nunan, Monte Serano, CA (US);
Yuri Erokhin, Georgetown, MA (US);
Paul Sullivan, Wenham, MA (US);
Steven R. Walther, Andover, MA (US);
Peter Nunan, Monte Serano, CA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.