Yunqzang Zhang

Title: Innovations of Yunqzang Zhang in Semiconductor Technology

Introduction

Yunqzang Zhang is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He holds 2 patents that focus on advanced methods for enhancing the performance of semiconductor devices. His work has significant implications for the manufacturing and efficiency of electronic components.

Latest Patents

One of Yunqzang Zhang's latest patents is titled "Methods of forming ultra-thin buffer oxide layers for gate dielectrics." This patent outlines a method that involves providing a silicon substrate with STI regions, forming a sacrificial oxide layer, and implanting oxygen within the substrate. The process culminates in the formation of an ultra-thin buffer oxide layer between the silicon substrate and the gate dielectric layer. Another significant patent is "Selective formation of hydrogen rich PECVD silicon nitride for improved NMOS transistor performance." This patent describes a method for selectively forming a silicon nitride layer in a semiconductor device, enhancing the performance of NMOS transistors through the diffusion of hydrogen from the PECVD silicon nitride layer.

Career Highlights

Yunqzang Zhang is currently employed at Chartered Semiconductor Manufacturing Ltd, where he applies his expertise in semiconductor fabrication. His innovative approaches have contributed to advancements in the field, particularly in the development of high-performance transistors.

Collaborations

Yunqzang has collaborated with notable colleagues such as Yong Meng Lee and Gao Feng, further enriching the research and development environment at his company.

Conclusion

Yunqzang Zhang's work in semiconductor technology exemplifies the impact of innovation on electronic device performance. His patents reflect a commitment to advancing the field and improving the efficiency of semiconductor manufacturing.