Company Filing History:
Years Active: 2020
Title: Yung-Lin Tseng: Innovator in Memory Structure Technology.
Introduction
Yung-Lin Tseng is a notable inventor based in Xiushui Township, Taiwan. He has made significant contributions to the field of memory structure technology. His innovative work has led to the development of a unique memory structure that enhances performance and efficiency.
Latest Patents
Yung-Lin Tseng holds a patent for a memory structure that includes a substrate, at least one stacked gate structure, a first spacer conductive layer, and a first contact. This memory structure features a control gate that extends in a first direction and is located on the substrate. The first spacer conductive layer is positioned on one sidewall of the control gate and is electrically insulated from it. Notably, the first spacer conductive layer consists of a first merged spacer portion and a first non-merged spacer portion, with the line width of the first merged spacer portion being greater than that of the first non-merged spacer portion. The first contact is connected to the first merged spacer portion, allowing the memory structure to achieve a larger process window of contact. He has 1 patent to his name.
Career Highlights
Yung-Lin Tseng is currently employed at United Microelectronics Corporation, a leading semiconductor company. His work at this organization has allowed him to focus on advancing memory structure technologies. His contributions have been instrumental in enhancing the capabilities of memory devices.
Collaborations
Yung-Lin Tseng has collaborated with notable colleagues such as Wang Xiang and Chia-Ching Hsu. These partnerships have fostered innovation and have contributed to the success of their projects.
Conclusion
Yung-Lin Tseng is a prominent figure in the field of memory structure technology, with a patent that showcases his innovative approach. His work continues to influence advancements in the semiconductor industry.