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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12628339 B1

PDFFull Text
Date of Patent:
May. 12, 2026

Filed:

Apr. 17, 2023

Resistor between dummy flash structures

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Weichang Liu, Singapore, SG;

Wang Xiang, Singapore, SG;

Chia Ching Hsu, Singapore, SG;

Yung-Lin Tseng, Changhua County, TW;

Shen-De Wang, Hsinchu County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:

Winston Hsu

Primary Examiner:

Viet Q Nguyen

Int. Cl.
CPC ...
G11C 27/00 (2006.01); H10B 41/30 (2023.01); H10D 1/47 (2025.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H10D 1/47 (2025.01); H10D 30/0411 (2025.01); H10D 30/681 (2025.01); H10D 30/6892 (2025.01); H10D 64/035 (2025.01);
Abstract

A resistor between dummy flash structures includes a substrate. The substrate includes a resistor region and a flash region. A first dummy memory gate structure and a second dummy memory gate structure are disposed within the resistor region of the substrate. A polysilicon resistor is disposed between the first dummy memory gate structure and the second dummy memory gate structure. The polysilicon resistor contacts the first dummy memory gate structure and the second dummy memory gate structure.

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