Company Filing History:
Years Active: 2019-2021
Title: Innovations of Inventor Yun Yue
Introduction
Yun Yue is a prominent inventor based in San Diego, California. He has made significant contributions to the field of radio frequency (RF) technology, holding a total of six patents. His work focuses on enhancing the performance and design of semiconductor devices.
Latest Patents
Yun Yue's latest patents include innovative technologies such as enhanced active and passive devices for RF process and design technology. This patent describes a metal-oxide-semiconductor (MOS) device that incorporates a guard ring surrounding the MOS device and at least one other MOS device. Additionally, the MOS device features a level zero contact layer connected to a first interconnect layer through level zero interconnects and vias, facilitating effective routing. Another notable patent is for a transistor with a fluorinated graphene spacer, which details an integrated circuit (IC) device comprising a semiconductor structure with source and drain contacts, as well as a gate. This design includes fluorocarbon spacers positioned between the gate and the source and drain contacts, enhancing the overall performance of the device.
Career Highlights
Yun Yue is currently employed at Qualcomm Incorporated, a leading company in the telecommunications and semiconductor industry. His work at Qualcomm has allowed him to push the boundaries of RF technology and contribute to advancements in integrated circuit design.
Collaborations
Yun Yue collaborates with talented individuals in his field, including colleagues Ye Lu and Bin Yang. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking developments in technology.
Conclusion
Yun Yue's contributions to the field of radio frequency technology and semiconductor design are noteworthy. His innovative patents and collaborations with esteemed colleagues highlight his commitment to advancing technology.