The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Aug. 08, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ye Lu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
Lixin Ge, San Diego, CA (US);
Yun Yue, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/72 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/02115 (2013.01); H01L 21/02181 (2013.01); H01L 21/02271 (2013.01); H01L 29/1004 (2013.01); H01L 29/1608 (2013.01); H01L 29/66037 (2013.01); H01L 29/6656 (2013.01); H01L 29/66068 (2013.01); H01L 29/72 (2013.01); H01L 29/785 (2013.01);
Abstract
An integrated circuit (IC) device may include a semiconductor structure. The semiconductor structure may include a source contact, a drain contact, and a gate. A first fluorocarbon spacer may be between the gate and the source contact. A second fluorocarbon spacer may be between the gate and the drain contact.