The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Aug. 31, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Chuan-Hsing Chen, San Diego, CA (US);
Chuan-cheng Cheng, San Diego, CA (US);
Yun Yue, San Diego, CA (US);
Ye Lu, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 29/93 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 21/2254 (2013.01); H01L 29/66174 (2013.01); H04B 1/40 (2013.01);
Abstract
A metal oxide semiconductor (MOS) varactor includes a first diffusion region of a first polarity and a second diffusion region of the first polarity on a semiconductor substrate. The MOS varactor further includes a channel between the first diffusion region and the second diffusion region on the semiconductor substrate. The channel has a surface dopant concentration less than 4e10.