The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Aug. 25, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 23/482 (2006.01); H01L 23/485 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 23/485 (2013.01); H01L 23/4824 (2013.01); H01L 23/66 (2013.01); H01L 29/4232 (2013.01); H01L 29/456 (2013.01); H01L 29/66174 (2013.01); H01L 2223/6677 (2013.01);
Abstract
A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.