The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Jul. 28, 2017
Qualcomm Incorporated, San Diego, CA (US);
Ye Lu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
Lixin Ge, San Diego, CA (US);
Yun Yue, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A complementary metal-oxide-semiconductor (CMOS) transistor may include a first semiconductor structure and a gate stack on the first semiconductor structure. The gate stack may include a gate dielectric layer on the first semiconductor structure, a work function material on the gate dielectric layer, and a gate metal fill material on the work function material of the gate stack. The gate metal fill material may include a low resistivity carbon alloy. A dielectric fill material may be included on the gate stack.