Hsinchu, Taiwan

Yun-Min Chang

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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9 patents (USPTO):

Title: Innovations of Yun-Min Chang

Introduction

Yun-Min Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Fin field-effect transistor device having contact plugs with re-entrant profile." This invention describes a method for forming a semiconductor device that includes creating a gate structure over a fin that protrudes above a substrate. It also involves forming source and drain regions on opposing sides of the gate structure, followed by the application of dielectric layers and etching processes to create contact plugs. Another notable patent is the "Field effect transistor device with air gap spacer in source/drain contact." This patent outlines a semiconductor device and manufacturing method that supports contacts while allowing for the formation of air gaps, enhancing the structural integrity of the device.

Career Highlights

Yun-Min Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to advancements in semiconductor manufacturing processes and device performance.

Collaborations

He has collaborated with notable colleagues such as Guan-Ren Wang and Ching-Feng Fu, further enhancing the impact of his inventions through teamwork and shared expertise.

Conclusion

Yun-Min Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and manufacturing processes.

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