Company Filing History:
Years Active: 2013-2024
Title: **Inventor Profile: Yun Jing Lin**
Introduction
Yun Jing Lin is a prominent inventor based in Hsinchu, Taiwan. With a total of seven patents to his name, Lin has made significant contributions to the field of semiconductor technology. His recent innovations showcase his expertise and creativity in device design.
Latest Patents
Among Lin's latest inventions is a groundbreaking semiconductor device that features an epitaxy region. This integrated circuit device is designed with a gate stack situated over a substrate, complemented by a first and a second L-shaped spacer made of silicon and carbon. The technology incorporates first and second source/drain epitaxy regions, positioned strategically between the aforementioned spacers and the gate stack. Additionally, Lin's methods for forming this device include the use of a dummy gate structure, where spacers and epitaxy regions are meticulously arranged, underscoring his advanced understanding of semiconductor fabrication.
Career Highlights
Yun Jing Lin has established himself as an innovative force at Taiwan Semiconductor Manufacturing Company Limited, where he applies his technical knowledge to develop cutting-edge semiconductor solutions. His patents not only reflect his individual talents but also the forward-thinking approach of the organization he represents.
Collaborations
Throughout his career, Lin has collaborated with esteemed colleagues such as Wei-Han Fan and Yu-Hsien Lin. These partnerships highlight the importance of teamwork in fostering innovation within the semiconductor industry. Working alongside talented professionals strengthens Lin's ability to push the boundaries of technology.
Conclusion
Yun Jing Lin's contributions to semiconductor innovation epitomize the spirit of invention and advancement. With his impressive portfolio of patents and collaborative efforts, he continues to influence the landscape of modern technology in meaningful ways.