The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

May. 20, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yun Jing Lin, Hsinchu, TW;

Wei-Han Fan, Hsin-Chu, TW;

Yu-Hsien Lin, Hsinchu, TW;

Yimin Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41783 (2013.01); H01L 21/28518 (2013.01); H01L 21/823418 (2013.01); H01L 21/823468 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract

The present disclosure describes a semiconductor device including a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is disposed on the substrate abutting the first gate stack. A second spacer element is adjacent the first spacer element. A source/raised drain is provided adjacent the gate stack. A conductive feature (e.g., silicide) is disposed on the source/drain and laterally contacts sidewalls of the second spacer element. In an embodiment, a contact directly interfaces with the second spacer element.


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