The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Mar. 13, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Te-Jen Pan, Hsinchu, TW;
Yu-Hsien Lin, Hsinchu, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Wei-Han Fan, Hsin-Chu, TW;
Yun Jing Lin, Hsinchu, TW;
Yimin Huang, Hsinchu, TW;
Tzu-Chung Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An exemplary method includes forming a dummy gate structure over a substrate and forming a set of spacers adjacent to the dummy gate structure. The set of spacers includes spacer liners disposed on sidewalls of the dummy gate structure and main spacers disposed on the spacer liners. The spacer liners include silicon and carbon. The method further includes forming source/drain epitaxy regions over the substrate. The source/drain epitaxy regions are disposed adjacent to the set of spacers, such that the dummy gate structure is disposed between the source/drain epitaxy regions. The method further includes removing the main spacers after forming the source/drain epitaxy regions. The method further includes replacing the dummy gate structure with a gate structure, where the replacing includes removing the dummy gate structure to form a trench defined by the spacers liners, such that the gate structure is formed in the trench.