The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jan. 20, 2011
Te-jen Pan, Hsinchu, TW;
Yu-hsien Lin, Hsin-Chu, TW;
Hsiang-ku Shen, Zhongli, TW;
Wei-han Fan, Hsin-Chu, TW;
Yun Jing Lin, Hsinchu, TW;
Yimin Huang, Hsinchu, TW;
Tzu-chung Wang, Shengang Township, Taichung County, TW;
Te-Jen Pan, Hsinchu, TW;
Yu-Hsien Lin, Hsin-Chu, TW;
Hsiang-Ku Shen, Zhongli, TW;
Wei-Han Fan, Hsin-Chu, TW;
Yun Jing Lin, Hsinchu, TW;
Yimin Huang, Hsinchu, TW;
Tzu-Chung Wang, Shengang Township, Taichung County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method is described which includes providing a substrate and forming a first spacer material layer abutting a gate structure on the substrate. A second spacer material layer is formed adjacent and abutting the gate structure and overlying the first spacer material layer. The first spacer material layer and the second spacer material layer are then etched concurrently to form first and second spacers, respectively. An epitaxy region is formed (e.g., grown) on the substrate which includes an interface with each of the first and second spacers. The second spacer may be subsequently removed and the first spacer remain on the device decreases the aspect ratio for an ILD gap fill. An example composition of the first spacer is SiCN.