Kawasaki, Japan

Yukimasa Ishida

This inventor holds 4 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 2001-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukimasa Ishida. Retrieved from https://idiyas.com/inventor/yukimasa-ishida-zvsicjdg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 118(Granted Patents)


Company Filing History:


Years Active: 2001-2004

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4 patents (USPTO):Explore Patents

Title: Innovations of Yukimasa Ishida

Introduction

Yukimasa Ishida is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of thin-film devices and semiconductor technology. With a total of 4 patents to his name, Ishida's work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is a process for fabricating a thin-film device having inclined sides. In this innovative process, a conducting layer composed of an anodically oxidizable metal is formed on a substrate and is etched to create gate bus lines and gate electrodes with upper surfaces parallel to the substrate and inclined side surfaces. The anodically oxidized gate bus lines and electrodes include inner conducting portions and outer insulating oxide films, which prevent short circuits and allow for a dense wiring arrangement.

Another notable patent is for a thin film transistor matrix featuring TFT with LDD regions. In this design, semiconductor islands are formed on an insulating substrate, and a gate insulating layer is created to traverse an intermediate region of each island. A gate electrode with tapered sidewalls is then formed, leaving wing-shaped gate insulating layers exposed on both sides. This design allows for ion implantation to create heavily doped regions in the semiconductor islands outside the gate insulating layers, as well as lightly doped drain regions under the wing regions of the gate insulating layer.

Career Highlights

Yukimasa Ishida is currently employed at Fujitsu Corporation, where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of thin-film devices and semiconductor applications.

Collaborations

Ishida has collaborated with Kenichi Nagaoka, further enhancing the research and development efforts in their field.

Conclusion

Yukimasa Ishida's contributions to the field of thin-film devices and semiconductors are noteworthy. His innovative patents and ongoing work at Fujitsu Corporation highlight his role as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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