The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Mar. 29, 1999
Applicant:
Inventor:
Yukimasa Ishida, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/100 ; B44C 1/22 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/100 ; B44C 1/22 ;
Abstract
In a method of etching an Al or Al alloy layer, an Al or Al alloy layer is formed on an underlying surface, the surface of the Al or Al alloy layer is processed with TMAH, a resist pattern is formed on the surface of the Al or Al alloy layer processed with TMAH, and by using the resist pattern as an etching mask, the Al or Al alloy layer is wet-etched.
Quick Actions:
Ishida, Yukimasa. (2002). Etching method, thin film transistor matrix substrate, and its manufacture (U.S. Patent No. 6335290). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6335290
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile