The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2001

Filed:

Mar. 13, 1998
Applicant:
Inventors:

Yukimasa Ishida, Kawasaki, JP;

Kenichi Nagaoka, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract

In a process for producing a thin-film device, a conducting layer composed of an anodically oxidizable metal is formed on a substrate and is etched to form gate bus lines and gate electrode having upper surfaces parallel to the substrate and inclined side surfaces. The gate bus lines and the gate electrodes are anodically oxidized, so that they include inner conducting portions and outer insulating oxide films covering the inner conducting portions. The outer insulating films prevent the bus lines from short circuiting, and the inclined side surfaces of the bus lines makes it possible to fabricate a dense wiring arrangement.


Find Patent Forward Citations

Ishida, Yukimasa. (2001). Thin-film device with annular shaped insulation on its gate electrode (U.S. Patent No. 6198132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6198132

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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