This inventor holds 4 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1993-1998.
Company Filing History:
Years Active: 1993-1998
Title: Innovations of Yukari Unno
Introduction
Yukari Unno is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on enhancing the efficiency and functionality of semiconductor devices.
Latest Patents
One of her latest patents involves a semiconductor device that features a gate electrode and an impurity diffusion layer. In this innovation, a polycrystalline silicon layer is formed on an N-type silicon substrate via an oxide film. A contact hole is created on the polycrystalline silicon layer by applying a photoresist mask and patterning a predetermined contact portion between a polycide gate and a diffusion layer. Following this, a P.sup.+ diffusion layer is formed through ion implantation using the same photoresist mask. Additionally, a tungsten silicide layer is deposited across the substrate. This method allows for the realization of an ohmic contact between the polycide gate electrode and the diffusion layer via the tungsten silicide layer, regardless of the conductivity types of the gate electrode and the diffusion layer, without the need for any additional metallic layer other than the polycide.
Career Highlights
Yukari Unno is currently employed at Kabushiki Kaisha Toshiba, where she continues to innovate in semiconductor technology. Her expertise and dedication have positioned her as a key figure in her field.
Collaborations
Some of her notable coworkers include Hiroshi Momose and Fumitomo Matsuoka, who contribute to her projects and research endeavors.
Conclusion
Yukari Unno's contributions to semiconductor technology through her patents and work at Toshiba highlight her importance in the field. Her innovations continue to pave the way for advancements in electronic devices.