The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
May. 09, 1996
Fumitomo Matsuoka, Kawasaki, JP;
Yukari Unno, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A polycrystalline silicon layer is formed on an N-type silicon substrate via an oxide film. A contact hole is formed on the polycrystalline silicon layer by applying a photoresist mask and further by patterning a predetermined contact portion between a polycide gate and a diffusion layer. Thereafter, a P.sup.+ diffusion layer is formed by ion implantation with the use of the same photoresist mask. Further, a tungsten silicide layer is deposited all over the substrate. Or else, after the contact hole has been formed, the tungsten silicide layer is deposited, and then the P.sup.+ diffusion layer is formed by ion implantation. Alternatively, after the contact hole has been formed, a first ion implantation is made; and after the tungsten silicide layer has been deposited, a second ion implantation is made to form the P.sup.+ diffusion layer. In the manufacturing method as described above, an ohmic contact can be realized between the polycide gate electrode and the diffusion layer via the tungsten silicide layer, irrespective of the conductivity types of the gate electrode and the diffusion layer, without use of any additional metallic layer other than the polycide.