The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1993
Filed:
Dec. 02, 1991
Hiroshi Momose, Tokyo, JP;
Yukari Unno, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
At least part of a low impurity concentration collector region which lies between the emitter and collector regions of a bipolar transistor in a Bi-CMOS device is formed to have a low impurity concentration. Therefore, a high emitter-collector withstanding voltage can be obtained. Further, at least part of the low impurity concentration collector region which lies between the base region and an opposite conductivity type region is formed to have a high impurity concentration. Therefore, the punch-through withstanding voltage of a parasitic transistor formed of the base, collector and, opposite conductivity type region can be enhanced, and, at the same time, the collector resistance can be reduced.