Tokyo, Japan

Yuichiro Hanyu

This inventor holds 10 USPTO granted patents and 3 published patent applications. Top assignee: Japan Display Inc.. Active years: 2018-2025.

USPTO Granted Patents = 10 

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Tokyo, JP (2018 - 2023)
  • Minato-ku, JP (2019 - 2024)

Company Filing History:


Years Active: 2018-2025

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10 patents (USPTO):Explore Patents

Title: Innovations of Yuichiro Hanyu

Introduction

Yuichiro Hanyu is a prominent inventor based in Minato-ku, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and stability of semiconductor devices, particularly in display technologies.

Latest Patents

Hanyu's latest patents include a semiconductor device that features a first oxide semiconductor layer, a first gate electrode, and a first gate insulating layer. This innovative design aims to improve the electrical connections within the device. Another notable patent involves a display device that incorporates a thin film transistor (TFT) made from oxide semiconductor. This invention addresses the challenges of mask alignment variations, ensuring that the display device maintains stable characteristics.

Career Highlights

Hanyu is currently employed at Japan Display Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced display solutions that are widely used in modern electronics.

Collaborations

Some of his notable coworkers include Masahiro Watabe and Takeshi Sakai, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Yuichiro Hanyu's contributions to semiconductor technology and his innovative patents have significantly impacted the industry. His work continues to pave the way for advancements in display devices and semiconductor applications.

Profile summary based on public USPTO records.
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