The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Aug. 04, 2021
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventors:
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/383 (2006.01); H01L 21/385 (2006.01); H01L 21/428 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02164 (2013.01); H01L 21/383 (2013.01); H01L 21/385 (2013.01); H01L 21/428 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1262 (2013.01); H01L 27/127 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); G02F 1/134363 (2013.01); G02F 1/1368 (2013.01); G02F 1/13685 (2021.01); H10K 59/1213 (2023.02);
Abstract
The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.