The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Jan. 11, 2018
Applicant:

Japan Display Inc., Minato-ku, JP;

Inventors:

Yuichiro Hanyu, Minato-ku, JP;

Arichika Ishida, Minato-ku, JP;

Masahiro Watabe, Minato-ku, JP;

Assignee:

Japan Display Inc., Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/32 (2006.01); G02F 1/1368 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1237 (2013.01); H01L 21/0217 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02274 (2013.01); H01L 21/02532 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/02675 (2013.01); H01L 27/1225 (2013.01); H01L 27/1229 (2013.01); H01L 27/1233 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H01L 27/1274 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/136209 (2013.01); G02F 2201/501 (2013.01); H01L 27/3262 (2013.01);
Abstract

A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.


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