The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Jun. 13, 2017
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventors:
Yuichiro Hanyu, Tokyo, JP;
Hirokazu Watanabe, Tokyo, JP;
Assignee:
Japan Display Inc., Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 51/05 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1229 (2013.01); H01L 27/1233 (2013.01); H01L 29/7869 (2013.01); H01L 51/0529 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.