Tokyo, Japan

Yui Takahashi

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 3.7

ph-index = 1


Company Filing History:


Years Active: 2019-2024

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3 patents (USPTO):Explore Patents

Title: Yui Takahashi: Innovator in Automotive and Semiconductor Technologies

Introduction

Yui Takahashi is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the fields of automotive and semiconductor technologies. With a total of three patents to her name, her work reflects a commitment to innovation and engineering excellence.

Latest Patents

Takahashi's latest patents include a subframe design and a semiconductor device. The subframe patent describes a channel-shaped member that includes a base member and a first member. The base member is open on its lower side and features wall portions that define a channel shape. The first member includes a bottom wall portion, a top wall portion, and a side wall portion, which together create a robust structure for vehicle applications. The semiconductor device patent involves a semiconductor chip with a p-n junction, covered by an opaque sealing resin. This design incorporates a functional region that prevents harmful light from reaching the sealing resin, thereby enhancing the device's longevity.

Career Highlights

Throughout her career, Yui Takahashi has worked with notable companies such as Nippon Steel Corporation and Nissan Motor Company Limited. Her experience in these leading organizations has allowed her to develop and refine her innovative ideas in practical settings.

Collaborations

Takahashi has collaborated with talented individuals in her field, including Junichiro Suzuki and Yohei Kato. These partnerships have contributed to her success and the advancement of her projects.

Conclusion

Yui Takahashi stands out as an influential inventor in the automotive and semiconductor industries. Her innovative patents and collaborative efforts highlight her dedication to advancing technology. Her work continues to inspire future innovations in these critical fields.

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