Pleasanton, CA, United States of America

Yueh-Hsin Chen

USPTO Granted Patents = 4 

 

Average Co-Inventor Count = 4.9

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2016-2017

where 'Filed Patents' based on already Granted Patents

4 patents (USPTO):

Title: Innovations of Yueh-Hsin Chen in Non-Volatile Memory Technology

Introduction

Yueh-Hsin Chen is a notable inventor based in Pleasanton, CA, who has made significant contributions to the field of non-volatile memory technology. With a total of 4 patents to his name, Chen's work focuses on enhancing memory device structures and functionalities.

Latest Patents

One of Chen's latest patents is titled "Self-aligned source for split-gate non-volatile memory cell." This invention describes a memory device that features a pair of conductive floating gates with inner sidewalls facing each other, insulated from a substrate of first conductivity type. The design includes a pair of spaced apart conductive control gates, each disposed over and insulated from one of the floating gates. The inner sidewalls of the floating gates are aligned with side surfaces of first spacers made of insulation material. Additionally, a trench is formed into the substrate, with sidewalls aligned with the second spacers, and silicon carbon is disposed in the trench, which is implanted with material to form a first region of a second conductivity type.

Another significant patent by Chen is the "Method of forming a self-aligned stack gate structure for use in a non-volatile memory array." This invention outlines a stack gate structure for a non-volatile memory array that includes a semiconductor substrate with multiple active regions. Each stack gate structure is designed with various insulating materials and charge holding gates, ensuring efficient operation and enhanced memory capabilities.

Career Highlights

Yueh-Hsin Chen is currently employed at Silicon Storage Technology, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory devices, making them more efficient and reliable.

Collaborations

Chen has collaborated with several talented individuals in his field, including Chien-Sheng Su and Jeng-Wei Yang, who have contributed to his research and development efforts.

Conclusion

Yueh-Hsin Chen's contributions to non-volatile memory technology through his innovative patents highlight his expertise and dedication to advancing the field. His work continues to influence the development of memory devices, ensuring their efficiency and reliability in various applications.

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