Hsinchu, Taiwan

Yu-Kuo Yang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010-2021

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2 patents (USPTO):Explore Patents

Title: Innovations of Yu-Kuo Yang in Non-Volatile Memory Technology

Introduction

Yu-Kuo Yang is a notable inventor based in Hsinchu, Taiwan, recognized for his contributions to non-volatile memory technology. With a total of two patents to his name, Yang has made significant advancements in methods for error correction and programming in memory devices.

Latest Patents

Yang's latest patents include a method of controlling verification operations for error correction of non-volatile memory devices. This method involves setting a tolerated error bit (TEB) number to a first value to manage verification operations. After programming the memory device a specific number of times, the TEB number is adjusted to a second value, which is greater than the first and less than or equal to the TEB threshold. This innovative approach allows for effective error correction while programming and verifying the memory device.

Another significant patent by Yang is related to a multi-level operation in nitride storage memory cells. This method enables the programming of a multi-level nitride storage memory cell to store various programming states corresponding to multiple threshold voltage levels. By utilizing a variable resistance that provides different resistance values, Yang's method enhances the efficiency and reliability of memory storage.

Career Highlights

Throughout his career, Yu-Kuo Yang has worked with prominent companies in the semiconductor industry, including Winbond Electronics Corporation and Elite Semiconductor Memory Technology, Inc. His experience in these organizations has contributed to his expertise

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