The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Feb. 14, 2020
Applicant:

Elite Semiconductor Memory Technology Inc., Hsinchu, TW;

Inventors:

Yu-Kuo Yang, Hsinchu, TW;

Takao Akaogi, Hsinchu, TW;

Pauling Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/0616 (2013.01); G06F 3/0632 (2013.01); G06F 3/0679 (2013.01);
Abstract

A method of controlling verification operations for error correction of a non-volatile memory device includes the following. A tolerated error bit (TEB) number for error correction of the non-volatile memory device is set to a first value to control verification operations in accordance with the TEB number. After at least one portion of the non-volatile memory device is programmed for a specific number of times, the TEB number is changed from the first value to a second value to control the verification operations in accordance with the TEB number, wherein the second value is greater than the first value and is less than or equal to the TEB threshold. The method may be performed while the at least one portion of the non-volatile memory device is programmed and verified.


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