Hsinchu, Taiwan

Pauling Chen

This inventor holds 1 USPTO granted patent. Top assignee: Elite Semiconductor Memory Technology, Inc. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pauling Chen. Retrieved from https://idiyas.com/inventor/pauling-chen-hgtudio0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: The Innovations of Pauling Chen

Introduction

Pauling Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory devices. His innovative approach has led to the development of a unique method for controlling verification operations for error correction.

Latest Patents

Pauling Chen holds a patent titled "Method of controlling verification operations for error correction of non-volatile memory device, and non-volatile memory device." This patent outlines a method that includes setting a tolerated error bit (TEB) number for error correction. The TEB number is initially set to a first value, which is then adjusted to a second value after programming the memory device a specific number of times. This method enhances the reliability of non-volatile memory devices by ensuring effective error correction.

Career Highlights

Pauling Chen is currently employed at Elite Semiconductor Memory Technology, Inc. His work focuses on advancing memory technology and improving device performance. His innovative contributions have positioned him as a key figure in the semiconductor industry.

Collaborations

Throughout his career, Pauling Chen has collaborated with esteemed colleagues such as Yu-Kuo Yang and Takao Akaogi. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Pauling Chen's work in the field of non-volatile memory devices exemplifies the spirit of innovation

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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