Elite Semiconductor Memory Technology, Inc

Pauling Chen

Takao Akaogi

Yu-Kuo Yang

A method of controlling verification operations for error correction of a non-volatile memory device includes the following. A tolerated error bit (TEB) number for error correction of the non-volatile memory device is set to a first value to control verification operations in accordance with the TEB number. After at least one portion of the non-volatile memory device is programmed for a specific number of times, the TEB number is changed from the first value to a second value to control the verification operations in accordance with the TEB number, wherein the second value is greater than the first value and is less than or equal to the TEB threshold. The method may be performed while the at least one portion of the non-volatile memory device is programmed and verified.

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Hsinchu, Taiwan

Pauling Chen