The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jul. 20, 2006
Po-an Chen, Hsinchu, TW;
Yu-kuo Yang, Hsinchu, TW;
Tzu-ching Chuang, Hsinchu, TW;
Hsiu-han Liao, Hsinchu, TW;
Po-An Chen, Hsinchu, TW;
Yu-Kuo Yang, Hsinchu, TW;
Tzu-Ching Chuang, Hsinchu, TW;
Hsiu-Han Liao, Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A method for programming a multi-level nitride storage memory cell capable of storing different programming states corresponding to multiple different threshold voltage levels includes providing a variable resistance capable of providing a plurality of different resistance values; connecting a drain side of the nitride storage memory cell to a selected one of the plurality of resistance values that corresponds to one of the multiple threshold voltage levels; and programming the nitride storage memory cell to store one of the program states corresponding to the one of the threshold voltage levels by applying a programming voltage to the drain side through the selected resistance.