Taichung, Taiwan

Yu-Kai Liao


Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Taichung, TW (2020 - 2022)
  • Yunlin County, TW (2022)

Company Filing History:


Years Active: 2020-2022

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5 patents (USPTO):Explore Patents

Title: Yu-Kai Liao: Innovator in Semiconductor Memory Technology

Introduction

Yu-Kai Liao is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor memory devices, holding a total of five patents. His work focuses on innovative methods for manufacturing memory devices that enhance performance and efficiency.

Latest Patents

One of Yu-Kai Liao's latest patents is a method of manufacturing a semiconductor memory device. This invention includes a substrate, an isolation structure, a first gate dielectric layer, a first conductive layer, a second gate dielectric layer, a second conductive layer, and a protective layer. The design features an array region and a periphery region, with the isolation structure strategically placed between these areas. Another notable patent is a method for manufacturing a memory device, which outlines a series of steps including the formation of gate structures, lining layers, and sacrificial layers to optimize the manufacturing process.

Career Highlights

Yu-Kai Liao is currently employed at Winbond Electronics Corporation, where he continues to develop cutting-edge technologies in semiconductor memory. His expertise in this area has positioned him as a key player in the industry, contributing to advancements that benefit various applications.

Collaborations

Yu-Kai has collaborated with notable colleagues such as Chiang-Hung Chen and Wen Hung. Their combined efforts have led to innovative solutions in semiconductor technology.

Conclusion

Yu-Kai Liao's contributions to semiconductor memory technology through his patents and work at Winbond Electronics Corporation highlight his role as a leading inventor in the field. His innovative methods are paving the way for future advancements in memory devices.

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