logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Yu-Jiun Shen

This inventor holds 8 USPTO granted patents and 1 published patent application. Top assignee: Epistar Corporation. Active years: 2009-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Jiun Shen. Retrieved from https://idiyas.com/inventor/yu-jiun-shen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Hsieh, TW (2012)
  • Hsinchu, TW (2009 - 2021)

Company Filing History:

goldMedal8 out of 1,234 
 
Epistar Corporation
 patents

Years Active: 2009-2021

Loading Chart...
8 patents (USPTO):Explore Patents
1. 11049961 - High electron mobility transistor and methods for manufacturing the same (2021-06-29),
2. 10290730 - Semiconductor power device (2019-05-14),
3. 8946736 - Optoelectronic device and method for manufacturing the same (2015-02-03),
4. 8664087 - Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate (2014-03-04),
5. 8362501 - Light-emitting device (2013-01-29),
6. 8344409 - Optoelectronic device and method for manufacturing the same (2013-01-01),
7. 8232563 - Light-emitting device (2012-07-31),
8. 7615773 - Semiconductor light-emitting device and manufacturing method thereof (2009-11-10),

Title: **Innovative Contributions of Yu-Jiun Shen in Semiconductor Technology**

Introduction

Yu-Jiun Shen, an accomplished inventor based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 8 patents to his name, he has been instrumental in advancing innovations that enhance the performance and efficiency of electronic devices.

Latest Patents

Two of Yu-Jiun Shen’s latest patents showcase his expertise in high-performance semiconductor devices. The first patent focuses on a high electron mobility transistor (HEMT), which incorporates a substrate, a channel layer, a barrier layer, and electrodes. Notably, the depletion layer comprises materials such as boron nitride or zinc oxide, optimizing the transistor’s performance.

The second patent details a novel semiconductor power device featuring an engineered aluminum-nitride substrate structure. This innovative design integrates a transition layer and a multi-layered GaN buffer structure, significantly contributing to higher breakdown voltage and improved overall device quality, while addressing common challenges related to epitaxy-induced defects.

Career Highlights

Yu-Jiun Shen is currently employed at Epistar Corporation, a leading player in the semiconductor industry. His work at Epistar involves the development of cutting-edge technology that enhances the capabilities of various electronic components, reflecting his commitment to innovation and progress in semiconductor applications.

Collaborations

Throughout his career, Yu-Jiun Shen has collaborated with industry peers, including notable coworkers Ching-Fu Tsai and Wei-Chih Peng. These collaborations have fostered a dynamic environment conducive to innovative thinking and have played a pivotal role in the success of various projects in the high-tech sector.

Conclusion

Yu-Jiun Shen's contributions to the field of semiconductor technology highlight his role as a leading inventor in Taiwan’s innovative landscape. With a strong portfolio of patents and a career dedicated to advancing electronic technologies, his work continues to inspire future innovations within the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…