The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Dec. 29, 2006
Shih-nan Yen, Hsinchu, TW;
Jung-tu Chiu, Hsinchu, TW;
Yu-jiun Shen, Hsinchu, TW;
Ching-fu Tsai, Hsinchu, TW;
Shih-Nan Yen, Hsinchu, TW;
Jung-Tu Chiu, Hsinchu, TW;
Yu-Jiun Shen, Hsinchu, TW;
Ching-Fu Tsai, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.