Epistar Corporation

Yu-Jiun Shen

Ching-Fu Tsai

Ta-Cheng Hsu

Wei-Chih Peng

Chia-Cheng Liu

Ya-Yu Yang

Min-Hsun Hsieh

Hsin-Mao Liu

Jen-Inn Chyi

Chien-Yuan Wang

Shih-Pang Chang

Shang-Ju Tu

Tsung-Cheng Chang

Hung-Chih Yang

Shih-Nan Yen

Jung-Tu Chiu

Hung-Chi Yang

A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

High electron mobility transistor and methods for manufacturing the same

A semiconductor power device includes an engineered aluminum-nitride substrate structure, and method of fabricating the same are described. The engineered substrate structure is effectively integrated with a transition layer of AlN/AlGaN disposed thereon, a buffer layer disposed on the transition layer having a C&#x2014;(Al)GaN/u-GaN multiple stacking layered structure, a channel layer, a barrier layer, and an optional SiNinterlayer together, to form a GaN-based semiconductor power device. The GaN buffer layer is capable of achieving sufficient thickness for higher performance. The engineered substrate structure has a core region made of an aluminum nitride (AlN) substrate, a single crystal silicon layer as top material layer thereof, and bonded together with an encapsulated multi-layered structure containing adhesive layers, thin film layers and the AlN substrate. Higher breakdown voltage and improved overall device quality with respect to epitaxy-induced bow, warp, and cracking issues are achieved by the semiconductor power device.

Semiconductor power device

An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

Optoelectronic device and method for manufacturing the same

A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.

Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate

The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.

Light-emitting device

A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.

A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.

Growing community of inventors

Hsinchu, Taiwan

Yu-Jiun Shen