Yu-I Shih

Title: Innovations of Yu-I Shih in Semiconductor Technology

Introduction

Yu-I Shih is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on advanced semiconductor devices and their manufacturing methods, showcasing his expertise and innovative spirit.

Latest Patents

Yu-I Shih's latest patents include a semiconductor device and manufacturing method that features a substrate with a pull-down transistor, a pass-gate transistor, and a pull-up transistor. The pull-up transistor is designed with a first gate structure and first source/drain epitaxy structures on either side, where the germanium concentration of the first epitaxy layer is higher than that of the second epitaxy layer. Another patent describes a method for forming semiconductor fins over p-well and n-well regions of a substrate, which involves a series of precise processes including implantation, etching, and epitaxy to create advanced semiconductor structures.

Career Highlights

Yu-I Shih is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to push the boundaries of semiconductor technology and contribute to the development of cutting-edge devices.

Collaborations

Yu-I Shih collaborates with Ren-Hua Guo, a talented woman in the field, enhancing the innovative efforts within their projects. Their partnership exemplifies the importance of teamwork in driving technological advancements.

Conclusion

Yu-I Shih's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for future innovations in semiconductor devices.