Hsinchu, Taiwan

Yu-Huang Yeh


Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013-2023

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6 patents (USPTO):

Title: Yu-Huang Yeh: Innovator in Memory Structure Technology

Introduction

Yu-Huang Yeh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory structure technology, holding a total of 6 patents. His work focuses on innovative designs that enhance the efficiency and functionality of memory devices.

Latest Patents

Yu-Huang Yeh's latest patents include a memory structure that features a substrate, a first dielectric layer, a second dielectric layer, a charge storage layer, an oxide layer, and a conductive layer. This design ensures that the first dielectric layer is positioned on the substrate, while the second dielectric layer is placed atop the first. The charge storage layer is strategically located between the two dielectric layers, with the oxide layer situated at both ends of the charge storage layer. The conductive layer is then placed on the second dielectric layer, creating a comprehensive memory structure. Another patent details the manufacturing method of this memory structure, emphasizing the same innovative components and their arrangement.

Career Highlights

Yu-Huang Yeh is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His role involves developing advanced memory technologies that are crucial for modern electronic devices. His expertise and innovative approach have positioned him as a key player in the field.

Collaborations

Yu-Huang Yeh has collaborated with notable colleagues, including Chuan-Fu Wang and Chia-Hung Chen. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

In summary, Yu-Huang Yeh is a distinguished inventor whose work in memory structure technology has led to significant advancements in the field. His contributions continue to influence the development of efficient memory devices, showcasing his commitment to innovation.

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