The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jan. 06, 2009
Sung-bin Lin, Hsinchu, TW;
Yuan-hsiang Chang, Hsinchu, TW;
Yu-huang Yeh, Hsinchu, TW;
Che-lieh Lin, Taoyuan County, TW;
Sung-Bin Lin, Hsinchu, TW;
Yuan-Hsiang Chang, Hsinchu, TW;
Yu-Huang Yeh, Hsinchu, TW;
Che-Lieh Lin, Taoyuan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A non-volatile memory including a substrate, two first conductive layers, a second conductive layer, a first dielectric layer, a second dielectric layer and two heavily doped regions is provided. The substrate has at least two isolation structures therein and an active region between the isolation structures. The first conductive layers are respectively disposed on the isolation structures. The second conductive layer is disposed on the substrate and covering a portion of the active region and a portion of each first conductive layer. The first dielectric layer is disposed between each first conductive layer and the second conductive layer. The second dielectric layer is disposed between the second conductive layer in the active region and the substrate. The heavily doped regions are disposed in the substrate beside the second conductive layer in the active region.