The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Nov. 03, 2022
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01); H10B 41/10 (2023.01); H10B 41/30 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/30 (2023.02); H10B 41/10 (2023.02); H10B 41/30 (2023.02); H10B 43/10 (2023.02);
Abstract
A memory structure including a substrate, a first dielectric layer, a second dielectric layer, a charge storage layer, an oxide layer, and a conductive layer is provided. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The charge storage layer is disposed between the first dielectric layer and the second dielectric layer. The oxide layer is located at two ends of the charge storage layer and is disposed between the first dielectric layer and the second dielectric layer. The conductive layer is disposed on the second dielectric layer.