Tainan, Taiwan

Yu-Hong Huang

This inventor holds 3 USPTO granted patents. Top assignees: United Microelectronics Corp., United Microelectronics Corps.. Active years: 2002-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Hong Huang. Retrieved from https://idiyas.com/inventor/yu-hong-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2002-2021

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3 patents (USPTO):Explore Patents

Title: Innovations of Yu-Hong Huang

Introduction

Yu-Hong Huang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on methods that enhance the fabrication and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is a "Method for fabricating a semiconductor device." This method involves providing a substrate with a top surface and forming a bottom metal embedded in the substrate. It includes the sequential stacking of a first etch stop layer, a first dielectric layer, a second etch stop layer, and a second dielectric layer on the substrate's top surface. A semiconductor element is then formed on the first etch stop layer, which comprises a top plate and an etch stop pad. The process also involves a first etching process to create partial vias that penetrate the various layers, ensuring proper separation and functionality.

Another significant patent is the "Method for increasing tolerance of contact extension alignment in COB DRAM." This method aims to enhance the alignment tolerance of contact extensions in capacitors over bit lines in dynamic random access memory. The process begins with a substrate that has a gate, bit line, and source/drain region, followed by the formation of an insulating layer. A dielectric layer is deposited, and a contact hole is created to expose part of the source/drain region. A conductive layer is then deposited, and an electrode of the capacitor is formed, ensuring that misalignment does not compromise the integrity of the electrode.

Career Highlights

Yu-Hong Huang has worked with prominent companies in the semiconductor industry, including United Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Throughout his career, Yu-Hong has collaborated with talented individuals such as Yu-Ju Yang and Kuo-Yuh Yang. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Yu-Hong Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods continue to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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