This inventor holds 8 USPTO granted patents and 5 published patent applications. Top assignees: Shanghai Huali Microelectronics Corporation, Shanghai Stairmed Technology Co., Ltd., Shanghai Huali Integrated Circuit Corporation. Active years: 2017-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
4 out of 157 
2 out of 3 
1 out of 138 Years Active: 2017-2026
Title: Innovations of Inventor Yu Bao
Introduction
Yu Bao, an innovative inventor located in Shanghai, China, has made significant contributions in the semiconductor industry. With a portfolio of four patents, Bao has developed groundbreaking methods that enhance semiconductor fabrication processes, demonstrating his expertise and dedication to innovation.
Latest Patents
His most recent patents include a method for avoiding IL regrown in a High-k/Metal Gate (HKMG) process. This innovative approach addresses and resolves the critical issue of oxygen accumulation in ionic liquid (IL) after an HKMG stack formation. The disclosure provides a fabrication method for creating high-k/metal gate semiconductor devices by integrating at least one Titanium (Ti) layer between multiple high-k layers. Furthermore, he has designed a high-k/metal gate semiconductor device that features at least one TiO2 layer positioned between these layers.
Additionally, Bao has developed methods for fabricating metal gate structures, which involve forming a silicon-nitride layer over a dummy gate in a second metal gate type transistor region. This technique effectively mitigates dummy gate loss during the chemical mechanical polishing (CMP) process for a PMOS gate. The method includes specific patterning processes designed to open the PMOS region and fill the gate materials, enhancing the overall efficiency and performance of semiconductor devices.
Career Highlights
Yu Bao is currently employed at Shanghai Huali Microelectronics Corporation, where he has been instrumental in driving forward technological advancements in semiconductor technology. His work focuses on developing effective solutions that improve fabrication efficiencies and product reliability.
Collaborations
Throughout his career, Yu has collaborated with other talented professionals in the field, including his coworkers HaiFeng Zhou and Xiaoqiang Zhou. Their collective expertise has fostered an environment of innovation, allowing for the successful development of cutting-edge patents that contribute to the industry.
Conclusion
Yu Bao's contributions to the semiconductor industry through his innovative patents highlight his role as a key influencer in technology advancements. His work not only addresses current challenges but also sets a foundation for future developments in semiconductor fabrication processes, solidifying his status as a notable inventor in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile