The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 12, 2016
Yu Bao, Shanghai, CN;
Xiaoqiang Zhou, Shanghai, CN;
Jun Zhou, Shanghai, CN;
Bin Zhong, Shanghai, CN;
Haifeng Zhou, Shanghai, CN;
Yu Bao, Shanghai, CN;
Xiaoqiang Zhou, Shanghai, CN;
Jun Zhou, Shanghai, CN;
Bin Zhong, Shanghai, CN;
Haifeng Zhou, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
A method of removing a dummy gate dielectric layer is provided. Firstly a first plasma containing F is utilized to remove the dummy dielectric layer which contains Si and O. Then a second plasma containing His utilized to remove fluorine compound on the surface of the semiconductor substrate. Since the fluorine residue formed after the first plasma treatment reacts with the second plasma to form a gaseous product HF, the fluorine element can be taken away from the semiconductor device with the HF, which prevents inversion layer offset and gate current leakage occurred in the subsequent processing steps due to the fluorine element.