The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Sep. 15, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Zhaoqin Zeng, Shanghai, CN;
Yu Zhang, Shanghai, CN;
Jingxun Fang, Shanghai, CN;
Yu Bao, Shanghai, CN;
Jianhua Xu, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses a method for manufacturing a metal gate of a PMOS, comprising: step 1, forming a P-type work function metal layer; step 2, depositing an N-type work function metal layer by means of a PVD process, wherein over a bottom surface of a gate trench, the N-type work function metal layer has a hill profile; step 3, forming a first top barrier metal sublayer by means of a conformal growth process, wherein the first top barrier metal sublayer completely fills a sharp corner area of the N-type work function metal layer at a corner of the gate trench; step 4, growing a second top barrier metal sublayer by means of a PVD bombardment process; step 5, forming a third top barrier metal sublayer and a fourth top barrier metal sublayer; and step 6, forming a metal conductive material layer.