This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Shanghai Huali Integrated Circuit Corporation. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Zhaoqin Zeng: Innovator in Metal Gate Manufacturing
Introduction
Zhaoqin Zeng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of methods for producing metal gates in PMOS technology. His innovative approach has led to the filing of a patent that showcases his expertise and creativity in this area.
Latest Patents
Zhaoqin Zeng holds a patent titled "Method for manufacturing metal gate of PMOS." This patent outlines a comprehensive process that includes several key steps. The method begins with the formation of a P-type work function metal layer, followed by the deposition of an N-type work function metal layer using a PVD process. The N-type layer is designed with a hill profile over the bottom surface of a gate trench. Subsequent steps involve the formation of multiple top barrier metal sublayers and a final metal conductive material layer, ensuring a robust and efficient manufacturing process.
Career Highlights
Zhaoqin Zeng is currently employed at Shanghai Huali Integrated Circuit Corporation, where he applies his knowledge and skills to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of PMOS devices. With a focus on innovation, Zeng continues to push the boundaries of what is possible in the field of integrated circuits.
Collaborations
Zhaoqin Zeng collaborates with talented colleagues, including Jingxun Fang and Yu Bao. Together, they contribute to the ongoing research and development efforts at their company, fostering an environment of creativity and innovation.
Conclusion
Zhaoqin Zeng is a notable inventor whose work in metal gate manufacturing has the potential to impact the semiconductor industry significantly. His patent reflects a deep understanding of the complexities involved in PMOS technology. Through his career at Shanghai Huali Integrated Circuit Corporation, Zeng continues to innovate and inspire future advancements in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile