Jingxun Fang

Title: Innovations and Contributions of Jingxun Fang

Introduction

Jingxun Fang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for manufacturing metal gates in PMOS devices. With a total of seven patents to his name, Fang's work has had a substantial impact on the industry.

Latest Patents

Fang's latest patents include a "Method for manufacturing metal gate of PMOS." This patent discloses a comprehensive process that involves several steps, including the formation of a P-type work function metal layer and the deposition of an N-type work function metal layer using a PVD process. The method also details the formation of multiple top barrier metal sublayers and a metal conductive material layer. Another notable patent is the "Method for avoiding IL regrown in a HKMG process." This innovation addresses the issue of oxygen accumulation in IL after an HKMG stack is formed, providing a fabrication method for high-k/metal gate semiconductor devices.

Career Highlights

Jingxun Fang has worked with notable companies such as Shanghai Huali Microelectronics Corporation and Shanghai Huali Integrated Circuit Corporation. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge semiconductor technologies.

Collaborations

Fang has collaborated with several professionals in his field, including Yu Bao and Tong Lei. These collaborations have further enhanced his research and development efforts.

Conclusion

Jingxun Fang's innovative work in semiconductor technology and his contributions through his patents highlight his importance as an inventor. His methods for manufacturing metal gates and addressing challenges in HKMG processes demonstrate his commitment to advancing the field.