The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Feb. 10, 2017
Applicant:
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Inventors:
Yingming Liu, Shanghai, CN;
Yu Bao, Shanghai, CN;
Haifeng Zhou, Shanghai, CN;
Jingxun Fang, Shanghai, CN;
Assignee:
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/28185 (2013.01); H01L 21/28229 (2013.01); H01L 29/49 (2013.01); H01L 29/513 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract
The present disclosure addresses and solves the current problem of oxygen accumulation in IL after an HKMG stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one Titanium (Ti) layer between multiple HK layers. A high-k/metal gate semiconductor device including at least one TiO2 layer between multiple HK layers is also provided.