Company Filing History:
Years Active: 2019-2020
Title: Innovations by Inventor Younghee Lee in Atomic Layer Etching
Introduction
Younghee Lee, an accomplished inventor based in Boulder, CO, has made significant contributions to the field of atomic layer etching (ALE). With a total of three patents to his name, his work at the University of Colorado showcases his dedication to advancing innovative technologies.
Latest Patents
Among his latest patents, Younghee Lee developed methods to enhance thermal atomic layer etching. His inventions involve a process that promotes ALE by facilitating sequential reactions using a metal precursor and a halogen-containing gas. Additionally, his methods address the etching rate by effectively removing residual species that may adhere to the surface, leading to improved efficiency in the etching process. His patents also encompass a solid substrate obtained through these advanced methods, along with the creation of porous and patterned solid substrates.
Career Highlights
Younghee Lee's work has made a notable impact in the field of materials science. His dedication to exploring innovative techniques in atomic layer etching has positioned him as a key figure in advancing this technology. His inventive approaches have led to notable advancements, emphasizing efficiency and precision in substrate processing.
Collaborations
Throughout his career, Younghee Lee has collaborated with talented colleagues such as Steven McClellan George and Nicholas Ray Johnson. These collaborations have played a vital role in supporting his research and innovations, fostering a productive environment that encourages the exchange of ideas.
Conclusion
With his remarkable patents and contributions, Younghee Lee is an influential figure in the realm of atomic layer etching. His inventive methodologies not only advance technology but also inspire future innovations in the field. As a researcher at the University of Colorado, he continues to push the boundaries of what is possible, shaping the future of materials science.